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Биполярный транзистор 411 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 411
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO3
411 Datasheet (PDF)
0.1. 2n411.pdf Size:129K _rca
0.2. mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf Size:386K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in h
0.3. sd1411.pdf Size:52K _st
SD1411RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.40 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 200 W MIN. WITH 16 dB GAIN=OUT.400 x .425 6LFL (M153)epoxy sealedORDER CODE BRANDINGSD1411 SD1411PIN CONNECTIONDESCRIPTIONThe SD1411 is a silicon NPN transistor designedfor telecommunications in HF and VHF frequencybands. This device utilizes g
0.4. 2sk4110.pdf Size:202K _toshiba
2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma
0.5. 2sb1411.pdf Size:215K _toshiba
0.6. 2sc5411.pdf Size:311K _toshiba
2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA
0.7. 2sk4112.pdf Size:210K _toshiba
2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
0.8. 2sk4115.pdf Size:343K _toshiba
2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS) 2SK4115 Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V
0.9. 2sk4113.pdf Size:210K _toshiba
2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
0.10. mp4411.pdf Size:194K _toshiba
MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV in One) MP4411 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT
0.11. ssm6k411tu.pdf Size:202K _toshiba
SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.5-V drive 2.10.1 Low ON-resistanceRDS(ON) = 23.8 m (max) (@VGS = 2.5 V) 1.70.1 RDS(ON) = 14.3 m (max) (@VGS = 3.5 V) RDS(ON) = 12 m (max) (@VGS = 4.5 V) 1 62 5Absolute Maximum
0.12. rn1410 rn1411.pdf Size:103K _toshiba
RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2410, RN2411 Equivalent Circuit Maximum Ratings (Ta = 25C) JED
0.13. 2sk4114.pdf Size:162K _toshiba
2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso
0.14. 2sk4111.pdf Size:240K _toshiba
2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu
0.15. 2sc4116.pdf Size:318K _toshiba
2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1586
0.16. 2sd1411a.pdf Size:216K _toshiba
0.17. 2sd1411.pdf Size:184K _toshiba
0.18. 2sc4117.pdf Size:334K _toshiba
2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package
0.19. ttc4116fu.pdf Size:210K _toshiba
TTC4116FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) TTC4116FU Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Small package
0.20. 2sc4118.pdf Size:213K _toshiba
2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588 Maximum Ratings (Ta25C) Characteristics Symbol Rating UnitCollec
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RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2410,RN2411 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1410, RN1411 Equivalent Circuit Maximum Ratings (Ta = 25C)
0.22. 2sk4117ls.pdf Size:270K _sanyo
Ordering number : ENA0791A 2SK4117LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4117LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
0.23. 2sc4119.pdf Size:38K _sanyo
Ordering number:EN2548BNPN Triple Diffused Planar Silicon Darlington Transistor2SC4119800V/15A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage , high-power switching.2048A[2SC4119]Features High speed (adoption of MBIT process). High breakdown voltage (VCBO=1500V). On-chip damper diode. High reliability.E :
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Ordering number : ENA0829 2SK4118LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4118LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
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EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit
0.28. ech8411.pdf Size:33K _sanyo
Ordering number : ENA0073 ECH8411N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8411ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID 9 ADrain Current (Pulse) IDP
0.29. 2sc4110.pdf Size:108K _sanyo
Ordering number:EN2475BNPN Triple Diffused Planar Silicon Transistor2SC4110400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4110] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
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Ordering number : ENN7383CPH6411N-Channl Silicon MOSFETCPH6411Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6411]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum
0.31. 2sk3411.pdf Size:31K _sanyo
Ordering number : ENN71752SK3411N-Channel Silicon MOSFET2SK3411DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SK3411]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3411]6.5 2.35.0 0.5
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Ordering number : ENA0830 2SK4119LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4119LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
0.33. 2sk4116ls.pdf Size:270K _sanyo
Ordering number : ENA0790A 2SK4116LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4116LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
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FJV4113RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJV3113R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR83R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note
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PN4117AN-Channel Switch This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from process 53.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Dra
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April 2015FDD9411_F085N-Channel PowerTrench MOSFET40 V, 15 A, 7.8 m Features Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A D Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Elec
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FJV4111RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=22K) Complement to FJV3111R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR81 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete
0.38. fjv4114r.pdf Size:46K _fairchild_semi
FJV4114RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJV3114R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR84R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not
0.39. fjv4112r.pdf Size:45K _fairchild_semi
FJV4112RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=47K) Complement to FJV3112R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR82 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete
0.40. fjv4110r.pdf Size:52K _fairchild_semi
FJV4110RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=10K) Complement to FJV3110R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR80 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete
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PN4117 MMBF4117PN4118 MMBF4118PN4119 MMBF4119GSG TO-92SSOT-23 DDMark: 61A / 61C / 61ENOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low current DC and audio applications.These devices provide excellent performance as input stages forsub-picoamp instrumentation or any high impedance signalsources. Sourced from Process 53.Abso
0.42. irfs4115pbf irfsl4115pbf.pdf Size:286K _international_rectifier
PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
0.43. irfp4110pbf.pdf Size:288K _international_rectifier
PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl
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AUIRFS4115AUTOMOTIVE GRADEAUIRFSL4115HEXFET Power MOSFETFeaturesDVDSS150Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.10.3ml 175C Operating Temperaturel Fast SwitchingG max. 12.1ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantID99A l Automotive Qualified * SDDescriptionDSpecifically designed for A
0.45. irfr3411.pdf Size:112K _international_rectifier
PD - 94393IRFR3411IRFU3411 Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 100V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques toachieve extremely low on-
0.46. irfb4115pbf.pdf Size:231K _international_rectifier
PD - 97354BIRFB4115PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Ca
0.47. irfr3411pbf.pdf Size:287K _international_rectifier
PD - 95371BIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to
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0.52. irfb4110pbf.pdf Size:237K _international_rectifier
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ411P-CHANNEL SIGNAL MOS FETFOR SWITCHINGThe 2SJ411 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)7.0 MAX. 1.2a switching element that can be directly driven by the output of anIC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for power control switche
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2411, 2SK2411-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2411 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high speed switching applications.4.8 MAX.10.6 MAX.3.6 0.21.3 0.2FEATURES10.0 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)
0.55. pbss4112panp.pdf Size:336K _nxp
PBSS4112PANP120 V, 1 A NPN/PNP low VCEsat (BISS) transistor29 November 2012 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.1.2 Features and benefit
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PBSS4112PAN120 V, 1 A NPN/NPN low VCEsat (BISS) transistor29 November 2012 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.1.2 Features and benefit
0.57. 2sc2411kfra.pdf Size:931K _rohm
2SC2411KFRA2SC2411K TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units : mm) 1) High ICMax.2SC2411KFRA2SC2411KICMax. = 0.5A2) Low VCE(sat).2.90.2Optimal for low voltage operation. 1.1+0.21.90.2 -0.10.80.10.95 0.952SA1036KFRA3) Complements the 2SA1036K. (1) (2)0 0.1(3)
0.58. 2sc4115s.pdf Size:159K _rohm
Low Frequency Transistor (20V, 3A) 2SC4115S Features Dimensions(Unit:mm) 1) Low VCE(sat). 2SC4115SVCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 40.2 20.22) Excellent current gain characteristics. 3) Complements the 2SA1585S. Structure 0.45+0.15-0.05Epitaxial planar type NPN silicon transistor 0.45+0.152.5+0.4 0.5 -0.05-0.15 Absolute maximum ratings (Ta
0.59. 2sc2411k.pdf Size:71K _rohm
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New ProductSi4116DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0095 at VGS = 4.5 V 25 17 17.5 nC0.0115 at VGS = 2.5 V 15.5APPLICATIONS Synchronous Buck- Low S
0.62. sib411dk.pdf Size:209K _vishay
SiB411DKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.066 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.094 at VGS = - 2.5 V - 20- 9a 6 nC COMPLIANTSC-75 Package0.130 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-ResistanceAPPLI
0.63. si4114dy.pdf Size:239K _vishay
New ProductSi4114DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET20e20 27.5 nC 100 % Rg and UIS Tested0.007 at VGS = 4.5 V 20e Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Low-Si
0.64. si4110dy.pdf Size:239K _vishay
New ProductSi4110DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.013 at VGS = 10 V 80 17.3 35 nCCOMPLIANT 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Primary Side Switch Half BridgeSO-8 Intermediate Bus ConverterD S1
0.65. sia411dj.pdf Size:189K _vishay
New ProductSiA411DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.041 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- 20 15 nC0.056 at VGS = - 1.8 V - Small Footprint Area- 12a- Low On-
0.66. si4411dy.pdf Size:226K _vishay
Si4411DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.010 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 300.0155 at VGS = - 4.5 V - 10 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS NotebookSO-8 - Load Switch- Battery SwitchSS1 8 D S D
0.67. si1411dh.pdf Size:101K _vishay
Si1411DHVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition2.6 at VGS = - 10 V - 0.52 TrenchFET Power MOSFETS- 150 4.2 nC2.7 at VGS = - 6 V - 0.51 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 200
0.68. 2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a pn4119a sst4119.pdf Size:68K _vishay
2N/PN/SST4117A SeriesVishay SiliconixN-Channel JFETs2N4117A PN4117A SST41172N4118A PN4118A SST41182N4119A PN4119A SST4119PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)4117 -0.6 to -1.8 -40 70 304118 -1 to -3 -40 80 804119 -2 to -6 -40 100 200FEATURES BENEFITS APPLICATIONSD Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Vo
0.69. si7411dn.pdf Size:532K _vishay
Si7411DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.019 at VGS = - 4.5 V - 11.4 TrenchFET Power MOSFET: 1.8 V Rated0.025 at VGS = - 2.5 V - 20 - 9.9 New PowerPAK Package0.034 at VGS = - 1.8 V - 8.5- Low Thermal Resistance, RthJC- Low 1.07 mm Pro
0.70. 2n2411 2n2412.pdf Size:69K _central
DATA SHEET2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL UNITS Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA
0.71. irfs4115pbf irfsl4115pbf.pdf Size:286K _infineon
PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
0.72. auirfs4115-7p.pdf Size:680K _infineon
AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip
0.73. irfp4110pbf.pdf Size:288K _infineon
PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl
0.74. auirfs4115 auirfsl4115.pdf Size:722K _infineon
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
0.75. irfb4115pbf.pdf Size:336K _infineon
IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita
0.76. irfs4115-7ppbf.pdf Size:302K _infineon
PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance
0.77. auirfp4110.pdf Size:519K _infineon
AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim
0.78. irfi4110gpbf.pdf Size:549K _infineon
IRFI4110GPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 4.5mID 72A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac
0.79. irfb4110pbf.pdf Size:341K _infineon
IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness
0.80. 2sc4116-y.pdf Size:331K _mcc
2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
0.81. 2sc2411-p.pdf Size:225K _mcc
MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
0.82. 2sc2411-q.pdf Size:225K _mcc
MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
0.83. 2sc4116-o.pdf Size:331K _mcc
2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
0.84. 2sc4116-gr.pdf Size:331K _mcc
2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
0.85. 2sc4116-bl.pdf Size:331K _mcc
2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
0.86. 2sc2411-r.pdf Size:225K _mcc
MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
0.87. 2sc4115s-q.pdf Size:307K _mcc
MCC2SC4115S-QMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4115S-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4115S-SFax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ('P' Suffix designates Plastic-EncapsulateRoHS Compliant. See orderin
0.88. fdd9411l-f085.pdf Size:671K _onsemi
FDD9411L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 25 A, 7.0 mFeatures Typical RDS(on) = 5.6 m at VGS = 10V, ID = 20 AD Typical Qg(tot) = 18 nC at VGS = 10V, ID = 20 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electr
0.89. ntgs4111p.pdf Size:138K _onsemi
NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A
0.90. fdd9411-f085.pdf Size:468K _onsemi
FDD9411-F085N-Channel PowerTrench MOSFET40 V, 25 A, 7.8 mFeaturesD Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS CapabilityD RoHS CompliantGG Qualified to AEC Q101SApplicationsD-PAKTO-252 Automotive Engine Control S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steerin
0.91. ntb6411ang nvb6411an.pdf Size:131K _onsemi
NTB6411AN, NTP6411AN,NVB6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 14 mW @ 10 V 77 AQualified and PPAP Capable The
0.92. nvgs4111p.pdf Size:113K _onsemi
NTGS4111P, NVGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications http://onsemi.com Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications NV Prefix for Automotive and Other Applications
0.93. ntljs4114n.pdf Size:84K _onsemi
NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V
0.94. ntb5411nt4g ntp5411ng.pdf Size:139K _onsemi
NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
0.95. ntp6411ang.pdf Size:106K _onsemi
NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
0.96. ntb5411n ntp5411n.pdf Size:143K _onsemi
Design for keynote 6 0 2 – designs for keynote. NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
0.97. ntb6411n ntp6411n.pdf Size:111K _onsemi
NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
0.98. ntgs4111pt1.pdf Size:134K _onsemi
NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A
0.99. ntljs4114nt1g.pdf Size:115K _onsemi
NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V
0.100. nths4111pt1g.pdf Size:193K _onsemi
NTHS4111PPower MOSFET-30 V, -6.1 A, Single P-Channel, ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (
0.101. ntgs4111p nvgs4111p.pdf Size:203K _onsemi
NTGS4111P, NVGS4111PMOSFET Power, Single,P-Channel, TSOP-6-30 V, -4.7 AFeatureshttp://onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable ApplicationsV(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space38 mW @ -10 V Improved Efficiency for Battery Applications-30 V -4.7 A68 mW @ -4.5 V
0.102. ntljd4116n-d.pdf Size:80K _onsemi
NTLJD4116NPower MOSFET30 V, 4.6 A, mCoolt Dual N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package70 mW @ 4.5 V 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logi
0.103. ntmfs4119n.pdf Size:82K _onsemi
NTMFS4119NPower MOSFET30 V, 30 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Fast Switching Times Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices2.3 mW @ 10 VApplications30 V 30 A3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC DMAXIMUM RATINGS (TJ = 25C
0.104. ntmfs4119nt1g.pdf Size:124K _onsemi
NTMFS4119NPower MOSFET30 V, 30 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Fast Switching Times Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices2.3 mW @ 10 VApplications30 V 30 A3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC DMAXIMUM RATINGS (TJ = 25C
0.105. dra4114t.pdf Size:220K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114TDRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
0.106. drc4113z.pdf Size:223K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4113ZDRC2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
0.107. dra4113z.pdf Size:224K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4113ZDRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
0.108. 2sc4111.pdf Size:56K _panasonic
Power Transistors2SC4111Silicon NPN triple diffusion planar typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7 0.33.0 0
0.109. mtm68411.pdf Size:276K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).MTM68411Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Package Overview CodeMTM68411 is the low ON resistance dual P-channel MOS FET designed for WMini8-F1load switch circuits.Package dimension clicks here. Click! Features Pin Name Dual P-channel MOS FET in o
0.110. drc4114w.pdf Size:222K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4114WSilicon NPN epitaxial planar typeFor digital circuitsDRC2114W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free packagePackage dimension
0.111. dra4114e.pdf Size:348K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114EDRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
0.112. drc4114t.pdf Size:220K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4114TDRC2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
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0.113. un4110q un4110r un4110s un4111 un4112 un4113 un4114 un4115q un4115r un4115s un4116q un4116r un4116s un4117q un4117r un4117s.pdf Size:180K _panasonic
Transistors with built-in ResistorUN4111/4112/4113/4114/4115/4116/4117/4118/4119/4110/411D/411E/411F/411H/411LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.markingResistance by Part N
0.114. dra4114y.pdf Size:223K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114YDRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
0.115. drc4114y.pdf Size:223K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4114YDRC2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
0.116. ut4411.pdf Size:262K _utc
UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char
0.117. stc411.pdf Size:310K _auk
STC411NPN Silicon TransistorDescription PIN Connection General purpose amplifier C High voltage application BFeatures Low saturation switching application E Voltage regulator application Low saturation : VCE(SAT)=0.4V Max. TO-92 High Voltage : VCEO=60V Min. Ordering Information Type NO. Marking Package Code STC411 STC411 TO-92 Abso
0.118. jansr2n7411.pdf Size:52K _intersil
JANSR2N7411Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil Corporationhasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si
0.119. 2sa1411.pdf Size:27K _no
0.120. mg9411-r.pdf Size:562K _semelab
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R TO-3P Plastic Package Complimentary NPN MG6331 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG9411 MG9411-R VCBO Col
0.121. 2n4114.pdf Size:12K _semelab
2N4114Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
0.122. 2n4113.pdf Size:11K _semelab
2N4113Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
0.123. 2n2411x.pdf Size:10K _semelab
2N2411XDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
0.124. ssp7411p.pdf Size:162K _secos
SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-
0.125. 2sc4115.pdf Size:71K _secos
2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 123B C AE CLASSIFICATION OF hFE(1) ECProduct-Rank 2SC4115-Q 2SC4115-R 2SC411
0.126. 2sc4116.pdf Size:160K _secos
2SC4116 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High voltage and high current. A Excellent hFE linearity. L3 High hFE. 3Top View C B Low noise. 11 2 Complementary to 2SA1586 2K EDCLASSIFICATION OF hFE H JF GP
0.127. 2sc2411.pdf Size:225K _secos
2SC2411NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsA suffix of '-C' specifies halogen & lead-freeSOT-23 Dim Min Max Collector3A 2.800 3.040FEATURES1 B 1.200 1.400Base 2C 0.890 1.110nEmitterPower DissipationoD 0.370 0.500 PCM: 200 mW ( Tamb= 25 C)G 1.780 2.040AnRoHS Compliant ProductH 0.013 0.100LJ J 0.085 0.
0.128. tsc2411cx.pdf Size:308K _taiwansemi
TSC2411 General Purpose NPN Transistor SOT-23 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 40V 2. Emitter 3. Collector BVCBO 75V IC 600mA VCE(SAT) 0.5V @ IC / IB = 380mA / 10mA Features Ordering Information Driver Stage of AF Amplifier Part No. Package Packing General Purpose Switching Application TSC2411CX RF SOT-23 3Kpcs / 7 Reel Structure Ep
0.129. tgf4118-epu.pdf Size:157K _triquint
TGF4118-EPU 18 mm Discrete HFET4118February 23,2001 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils(0.914 x 2.057 x 0.102 mm)TGF4118-EPU RF Performance at F = 2.3 GHzVd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and TA = 25C50 55Pout48PAE5046
0.130. 2n4117 2n4118 2n4119 pn4117 pn4118 pn4119 sst4117 sst4118 sst4119.pdf Size:21K _calogic
N-Channel JFETGeneral Purpose AmplifierCORPORATION2N4117 2N4119 / 2N4117A 2N4119APN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119FEATURESPIN CONFIGURATION Low Leakage Low CapacitanceABSOLUTE MAXIMUM RATINGSTO-92(T = 25oC unless otherwise noted)ATO-72Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Curre
0.131. csc4115.pdf Size:83K _cdil
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115(9AW)TO-92BCEMARKING : CSC4115BCABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 40 VCollector Emitter Voltage BVCEO 20 VEmitter Base Voltage BVEBO 6.0 VCollect
0.132. ktd1411.pdf Size:384K _kec
SEMICONDUCTOR KTD1411TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE DARLINGTON TRANSISTOR.ABDCFEATURESEHigh DC Current Gain : hFE=3000(Min.) F(VCE=2V, IC=1A)GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 80 V_+F 11.0 0.3G 2.9
0.133. krc410-krc411-krc414.pdf Size:366K _kec
SEMICONDUCTOR KRC410, 411, 414EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05
0.134. ktx411t.pdf Size:46K _kec
KTX411TSEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215Including two(TR, Diode) devices in TSV.B 1.6+0.2/-0.1_C 0.70 + 0.05(Thin Super Mini type with 5 pin)2_D 0.4 + 0.1Simplify circuit design. E 2.8+0
0.135. ls4117 ls4118 ls4119.pdf Size:14K _linear-systems
LS4117, 4118, 4119ULTRA-HIGH INPUT IMPEDANCEN-CHANNEL JFETLinear Integrated SystemsFEATURESLOW POWER IDSS
0.136. 2sc4115.pdf Size:1392K _htsemi
2SC4115 TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 20 VCollector-Emitter Voltage VEBO 6 V
0.137. 2sc4116.pdf Size:834K _htsemi
2SC4116 TRANSISTOR (NPN)SOT-323 FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise 1. BASE Complementary to 2SA1586 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Coll
0.138. 2sc2411.pdf Size:643K _htsemi
2SC2411SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current
0.139. gm6411.pdf Size:248K _gsme
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM6411SCHOTTKY DIODESCHOTTKY DIODESCHOTTKY DIODE FEATURES Characteristic Symbol Max Unit Power dissipation PD(Ta=25) 225 mWFo
0.140. 2sc4116 sot-323.pdf Size:276K _lge
2SC4116 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50
0.141. 2sc4115.pdf Size:1152K _lge
2SC4115 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B 4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.400.480.442x)0.13 B0.35 0.37 Excellent current gain characteristics. 1.53.0 Complements to 2SA1585 Dimensions in inches and (millimeter
0.142. 2sc2411 sot-23.pdf Size:204K _lge
2SC2411 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR FeaturesHigh ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 32
0.143. 2sc4116.pdf Size:202K _wietron
2SC4116General Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2SOT-323(SC-70)FEATURES EMITTER* High voltage and high current * Excellent hFE linearity * High hFE* Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage
0.144. 2sc2411k.pdf Size:1663K _wietron
2SC2411KNPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO32 VVCBOCollector-Base Voltage 40 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t
0.145. 2sc2411kxlt1.pdf Size:295K _willas
FM120-M WILLAS2SC2411KxLT1THRUMedium Power TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN silicon
0.146. aod4112.pdf Size:114K _aosemi
AOD4112N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesSRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky VDS (V) = 30Vdiode to provide excellent R ,and low gate charge. ID = 20A (VGS = 10V)DS(ON)This device is suitable for use as a low side FET in RDS(ON)
0.147. ao6411.pdf Size:323K _aosemi
AO641120V P-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)
0.148. ao7411.pdf Size:353K _aosemi
AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)
0.149. aon2411.pdf Size:254K _aosemi
AON241112V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -12V Very Low RDS(ON) at 1.8V VGS ID (at VGS=-4.5V) -20A Low Gate Charge RDS(ON) (at VGS=-4.5V)
0.150. aob411l.pdf Size:326K _aosemi
AOB411L60V P-Channel MOSFETGeneral Description Product SummaryVDSThe AOB411L combines advanced trench MOSFET -60V-78Atechnology with a low resistance package to provide ID (at VGS=-10V)extremely low RDS(ON).This device is ideal for boost
0.151. ao4411.pdf Size:608K _aosemi
AO441130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4411 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)
0.152. aoc2411.pdf Size:202K _aosemi
AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
0.153. aon6411.pdf Size:262K _aosemi
AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
0.154. aod4110.pdf Size:116K _aosemi
AOD4110N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesThe AOD4110 uses advanced trench technology with VDS (V) = 30Va monolithically integrated Schottky diode to provide ID =40A (VGS = 10V)excellent RDS(ON),and low gate charge. This device is RDS(ON)
0.155. ap4411gm.pdf Size:70K _ape
AP4411GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -30V DDLow On-resistance D RDS(ON) 25m DFast Switching ID -8.2A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of
0.156. ap4411gm-hf.pdf Size:92K _ape
AP4411GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Fast Switching Characteristic RDS(ON) 25mD RoHS Compliant & Halogen-Free ID -8.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged
0.157. am3411pe.pdf Size:73K _analog_power
Analog Power AM3411PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7applications are DC-DC converters and -200.057 @ VGS = -2.5V -4.9power management in portab
0.158. am6411p.pdf Size:166K _analog_power
Analog Power AM6411PP-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9dissipation. Typical applications are DC-DC converters and power management in portable and 35
0.159. am7411p.pdf Size:325K _analog_power
Analog Power AM7411PP-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)229 @ VGS = -10V -3.8 Low thermal impedance -100248 @ VGS = -4.5V -3.7 Fast switching speed Typical Applications: DFN5x6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
0.160. afn8411.pdf Size:576K _alfa-mos
AFN8411 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8411, N-Channel enhancement mode 100V/5.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.6A,RDS(ON)=125m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
0.161. afp3411.pdf Size:481K _alfa-mos
AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
0.162. btc2411l3.pdf Size:265K _cystek
Spec. No. : C203L3 Issued Date : 2005.02.22 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411L3Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
0.163. btc2411n3.pdf Size:283K _cystek
Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.09.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411N3Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
0.164. btb4110d3.pdf Size:224K _cystek
Spec. No. : C815D3 Issued Date : 2011.03.25 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -20VIC -5ABTB4110D3 RCESAT 75m(typ.) Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -4A / -100mA Excellent DC current gain characteristics Pb-free package Symbol Outline BTB4110D3 TO-126ML Buildbox 1 3 4 – drag and drop game builder.
0.165. btc2411n3g.pdf Size:284K _cystek
Spec. No. : C203N3G Issued Date : 2008.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3GDescription The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA.
0.166. hbn2411s6r.pdf Size:279K _cystek
Spec. No. : C203S6R Issued Date : 2003.09.12 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/ 8 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2411S6R Features Two BTC2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.
0.167. mtp4411q8.pdf Size:287K _cystek
Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast
0.168. mtp4411aq8.pdf Size:455K _cystek
Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2016.03.30 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP4411AQ8 ID@VGS=-10V, TA=25C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m(typ)RDSON@VGS=-4.5V,ID=-4.2A 43m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead
0.169. mtp4411m3.pdf Size:281K _cystek
Spec. No. : C400M3 CYStech Electronics Corp. Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP4411M3 ID -5A40m (typ.)RDSON@VGS=-10V, ID=-4A 58m (typ.)RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline
0.170. btc2411s3.pdf Size:271K _cystek
Spec. No. : C203S3-R Issued Date : 2003.11.18 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411S3Description The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat
0.171. apm4115pu.pdf Size:206K _anpec
APM4115PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-45A, RDS(ON)= 12.5m (typ.) @ VGS=-10VDG RDS(ON)= 18.5m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD TV InverterDP-Channel MOSFETOrderin
0.172. stu411d.pdf Size:267K _samhop
GreenProductSTU411DaS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 15A-40V -12A42 @ VGS=4.5V 68 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(
0.173. sts3411a.pdf Size:107K _samhop
GreenProductSTS3411AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.52 @ VGS=-10VSuface Mount Package.-30V -3.6A65 @ VGS=-4.5V ESD Protected.D SOT-23GDSGSABSOLUTE MAXIMUM RATINGS (TA=25C unless
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0.174. lp4411et1g.pdf Size:288K _lrc
LESHAN RADIO COMPANY, LTD.LP4411ET1GP-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = -30VID = -8 A (VGS = -10V)RDS(ON)
0.175. l2sc2411krlt1g.pdf Size:613K _lrc
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2411KRLT1GFEATURESS-L2SC2411KRLT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT 23 DEVICE MARK
0.176. l2sc2411kqlt1g.pdf Size:173K _lrc
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SC2411KQLT1GNPN silicon SeriesFEATURES-L2SC2411KQLT1G Epitaxial planar typeSeries Complementary to L2SA1036K We declare that the material of product are Halogen Free and3compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101
0.177. 2sc4110b.pdf Size:249K _nell
RoHS 2SC4110B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor25A/400V Switching Regulator Applications15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1High-speed switchingHigh breakdown voltage and high reliability5.450.1 5.450.11.4Wide SOA (Safe Operation Area)
0.178. csb4110.pdf Size:109K _china
CSB4110 N PD TC=25 370 W ID VGS=10V,TC=25 180 A ID VGS=10V,TC=100 130 A IDM 670 A VGS 20 V Tjm +175 Tstg -55 +175 RthJC 0.042 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=75A 0.01 VGS th VDS=VGS,I
0.179. ftc2411k.pdf Size:62K _first_silicon
SEMICONDUCTORFTC2411KTECHNICAL DATAMedium Power TransistorNPN siliconFEATUREEpitaxial planar type3Complementary to FTA1036K12DEVICE MARKING AND ORDERING INFORMATIONSOT 23 (TO236AB)Device Marking ShippingFTC2411K-Q CQ 3000/Tape&ReelFTC2411K-R CR 3000/Tape&Reel3COLLECTOR1MAXIMUM RATINGS (TA = 25C)BASEParameter Symbol Limits Unit2Collector-base
0.180. dta401-dta411 dta417 dta422-dta423.pdf Size:708K _first_silicon
DTA401~411 / DTA417SEMICONDUCTORTECHNICAL DATA DTA422~423Bias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti
0.181. 2sa1411.pdf Size:535K _kexin
SMD Type orSMD Type TransistICsPNP Transistors 2SA1411SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesVery high DC current gain:hFE=500 to 1600.High VEBO Voltage:VEBO=-10V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -25 VCollector-emitte
0.182. ao4411.pdf Size:1241K _kexin
SMD Type MOSFETP-Channel MOSFETAO4411 (KO4411)SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-10V) RDS(ON) 32m (VGS =-10V)1.50 0.15 RDS(ON) 55m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-
0.183. 2sc4115.pdf Size:296K _kexin
SMD Type TransistorsNPN Transistors2SC41151.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA15850.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base
0.184. 2sc4116.pdf Size:1131K _kexin
SMD Type TransistorsNPN Transistors2SC4116 Features High voltage and high current High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15861 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50
0.185. 2sc2411.pdf Size:337K _kexin
SMD Type TransistorsNPN Transistors2SC2411 (2SC2411K)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A1 2 Low VCE(sat).Optimal for low voltage operation.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complements the 2SA1036/2SA1036K1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter
0.186. 2sc4117.pdf Size:1663K _kexin
SMD Type TransistorsNPN Transistors2SC4117 Features High voltage: VCEO = 120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15871 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120
0.187. 2sc4118.pdf Size:993K _kexin
SMD Type TransistorsNPN Transistors2SC4118 Features Excellent hFE linearity:: hFE(2)=25(min) Complementary to 2SA15881 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA Ba
0.188. pja3411.pdf Size:205K _panjit
PPJA3411 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -20 V Current -3.1A Features RDS(ON) , [email protected], [email protected]
0.189. 2sc2411kgp.pdf Size:92K _chenmko
CHENMKO ENTERPRISE CO.,LTD2SC2411KGPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST
0.190. csd16411q3.pdf Size:352K _ciclon
N-Channel CICLON NexFET Power MOSFETs CSD16411Q3 Product Summary Features Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 2.9 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 0.7 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 12 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 8 m Pb Free Terminal Plating Vth 2.0 V RoHS Compli
0.191. elm34411aa.pdf Size:613K _elm
Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
0.192. elm14411aa.pdf Size:410K _elm
Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)
0.193. elm33411ca.pdf Size:610K _elm
Single P-channel MOSFETELM33411CA-SGeneral description Features ELM33411CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)
0.194. gsm3411.pdf Size:733K _globaltech_semi
GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
0.195. gsm8411.pdf Size:910K _globaltech_semi
GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly
0.196. 2sc4115s-s.pdf Size:386K _lzg
2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)
0.197. 2sc4115s-r.pdf Size:386K _lzg
2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)
0.198. 3dg2411k.pdf Size:313K _lzg
2SC2411K(3DG2411K) NPN /SILICON NPN TRANSISTOR :/Purpose: Medium power amplifier applications. :, 2SA1036K(3CG1036K) Features: Large I , low V ,complementary pair with the 2SA1036K(3CG1036K). C CE(sat)/Absolute maximum ratings(Ta=25)
0.199. 3dg4115s.pdf Size:386K _lzg
2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)
0.200. me4411 me4411-g.pdf Size:1244K _matsuki_electric
ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON)10m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON)13m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD
0.201. mmp4411.pdf Size:154K _m-mos
MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), [email protected], Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25
0.202. mmp4411dy.pdf Size:150K _m-mos
MMP4411DYData SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, [email protected] = 10mRDS(ON), [email protected], [email protected] = 15.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristic
0.203. stn4110.pdf Size:870K _stansontech
STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS =
0.204. 2sc4115c.pdf Size:157K _sunroc
SUNROC2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD: 0.3 W (Tamb=25) 2. COLLECTOR Collector current I CM: 3 A 3. BASE Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy
0.205. tfh2411.pdf Size:305K _tinfar
Tin Far Electronic CO.,LTD Page No: 1/5 TFH2411 Features Two TFS2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High IC(Max) . IC (Max) = 0.6A Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA O
0.206. tfn2411.pdf Size:349K _tinfar
Tin Far Electronic CO.,LTDPage No: 2/6Characteristics (Ta=25C)Symbol Min. Typ. Max. Unit Test ConditionsBV 75 - - V I =10A CBO CBV 40 - - V I =10mA CEO CBV 6 - - V I =10A EBO EI - - 10 nA V =60V CBO CBI - - 10 nA V =60V, V =-3V CEX CE BEI - - 10 nA V =3V EBO EB*V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B*V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B*
0.207. tfs2411.pdf Size:115K _tinfar
Tin Far Electronic CO.,LTDPage No: 1/4TFS2411 Description The TFS2411 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low VCE(sat) Low leakage current High cutoff frequency Complementary to TFS1036 Symbol OutlineTFS2411 SOT-323 BBase C
0.208. qm2411k.pdf Size:311K _ubiq
QM2411K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3Afor most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir
0.209. qm2411sn8.pdf Size:324K _ubiq
QM2411SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2Acharge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc
0.210. qm2411j.pdf Size:349K _ubiq
QM2411J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req
0.211. qm2411v.pdf Size:352K _ubiq
QM2411V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ
0.212. qm2411g.pdf Size:338K _ubiq
QM2411G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req
0.213. hsu4113.pdf Size:2246K _huashuo
HSU4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID -23 A The HSU4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
0.214. hsm4113.pdf Size:785K _huashuo
HSM4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 40 m converter applications. ID -7.5 A The HSM4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
0.215. hsbb4115.pdf Size:532K _huashuo
HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
0.216. hsm4115.pdf Size:2138K _huashuo
HSM4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 13 m gate charge for most of the synchronous buck converter applications. ID -8.7 A The HSM4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
0.217. hsu4115.pdf Size:2277K _huashuo
HSU4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4115 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -52 A The HSU4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
0.218. irfs4115pbf.pdf Size:204K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS4115PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
0.219. 2sb1411.pdf Size:213K _inchange_semiconductor
isc Silicon PNP Darlington Power Transistor 2SB1411DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -1A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -1A, I = -2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSH
0.220. 2sc5411.pdf Size:198K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC5411DESCRIPTIONWith TO-3PFa packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCB
0.221. 2sc4111.pdf Size:211K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC4111DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.222. irfb4110.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
0.223. 2sk4115.pdf Size:282K _inchange_semiconductor
iscN-Channel MOSFET Transistor 2SK4115FEATURESLow drain-source on-resistance:RDS(ON) = 2.0 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.224. 2n4114.pdf Size:181K _inchange_semiconductor
isc Silicon NPN Power Transistor 2N4114DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
0.225. 2n4111.pdf Size:181K _inchange_semiconductor
isc Silicon NPN Power Transistor 2N4111DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
0.226. aob411l.pdf Size:236K _inchange_semiconductor
isc P-Channel MOSFET Transistor AOB411LFEATURESDrain Current I = -78A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge
0.227. irfr3411.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411FEATURESStatic drain-source on-resistance:RDS(on)44mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate
0.228. 2sk1411.pdf Size:201K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1411DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen
0.229. irfu3411.pdf Size:261K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFU3411FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
0.230. 2sc4110-f2.pdf Size:112K _inchange_semiconductor
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE
0.231. 2sc4116.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC4116DESCRIPTIONWith SOT-323 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBO
0.232. 2n4113.pdf Size:182K _inchange_semiconductor
isc Silicon NPN Power Transistor 2N4113DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
0.233. irfb4115.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM
0.234. 2sc4110.pdf Size:226K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
0.235. irfb4110g.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
0.236. irfsl4115.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4115FEATURESWith TO-262 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
0.237. 2sd1411.pdf Size:215K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1411DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1018Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.
0.238. irfp4110.pdf Size:243K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4110IIRFP4110FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr
0.239. mj411.pdf Size:208K _inchange_semiconductor
isc Silicon NPN Power Transistor MJ411DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 300V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= 0.8 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circ
0.240. irfb4115g.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU
0.241. irfi4110g.pdf Size:256K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFI4110G,IIRFI4110GFEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh speed power switchingHard switch and high frequency circuitsABSOLUTE MAXIMUM RATINGS(
0.242. 2n4112.pdf Size:181K _inchange_semiconductor
isc Silicon NPN Power Transistor 2N4112DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Другие транзисторы.. 41025, 41026, 41027, 41028, 41038, 41039, 41042, 41044, BC147, 413, 41500, 41501, 41502, 41503, 41504, 41505, 41506.
Список транзисторовОбновленияBJT: TMPTH81 | TMPTA93 | TMPTA92 | TMPTA70 | TMPTA64 | TMPTA63 | TMPTA56 | TMPTA55 | TMPT5401 | TMPT5087 | TMPT5086 | TMPT4403 | TMPT4402 | TMPT4126 | TMPT4125 | TMPT3906 | TMPT3905 | TMPT3798A | TMPT3798 | TMPT3638A | TMPT3638
How many times have you forgotten your shopping list at home? How many notes and stickers with reminders do you have lying around? Do you often have good ideas only to realize you do not have your notebook on you? The simple solution to this common problem is a digital notebook. With a digital notebook, you have all your notes on you at all times, easily accessible via Smartphone, even when you are on the go.
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This article was last updated in April 2021.
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Whether it is school, university, work, or everyday use, the digital notebook Outline is very popular with Apple users. This app is particularly suitable if you want to record notes on your smartphone or tablet on the go. The best part? Outline is totally compatible with OneNote. The app combines the strongest aspects of OneNote and adds additional features – making Outline one of the best OneNote alternatives.
A definite advantage is clarity: Just like OneNote, you can collect your notes in different books, which in turn can then be organized into as many tabs as required. Under these, you can create an unlimited amount of additional pages. The principle resembles a filing cabinet. It is simple to operate, allowing you to swiftly manage your books according to your personal themes. Your notes can be placed on the whiteboard and restructured according to preference. Your OneNote notes can also be transferred, opened and edited on Apple’s Outline. Apple’s chic design gives everything the finishing touch. Alternatively, you can also download OneNote’s format.
In terms of text formatting, all the essential tools you might need are there, including word processing tools such as Word. Additionally, there is a drawing function which allows you to draw by yourself, or select prescribed shapes such as circles, rectangles, or arrows. The integrated search function allows you to easily go through your notes. You can find your notes even faster when you prioritize single words with tags. You can allocate passwords to your notebooks, to protect them from unauthorized access.
With regards to multimedia, Outline is versatile: You can insert pictures, graphics, and screenshots in your notes, as well as videos or voice messages. You can print single notes directly or save them in Word or in PDF format respectively. Furthermore, PDF documents can be labeled and commented on.
Additionally, you have the opportunity to share your notebooks with colleagues or friends by email, and invite them to create shared notes. To do this, select your preferred cloud solution and save your notes for example on iCloud drive, Box, OneDrive, SharePoint, or Dropbox. Highly sensitive notes should be protected and kept offline. Pixelmator pro 3 8 4.
Shared note creation with OneNote users is only possible in Outline via Microsoft's in-house storage solution OneDrive.
Outline requires a fee – which is not that surprising considering the wide range of functions. With its attractive OneNote compatibility, many users are happy to pay for it. Even though the app is extremely reliable, there are occasionally synchronization errors. In particular, the transferring of hand-written notes is not always successful. Even though Outline has many convincing aspects, the program only catches the interest of Apple users.
Evernote: More features but more expensive
Evernote can offer everything that Outline is missing: Thanks to suitable apps, the virtual notebook is completely functional on all platforms and can be used just as well as an app on a PC (Windows and macOS), smartphone or tablet (iOS and Android), or as a web app. When new features become available, they are available on all operating systems at the same time. Because of this, Evernote is one step ahead of its opponents and enjoys growing popularity as a OneNote alternative.
With regards to clarity, text formatting, and multimedia, Evernote is comparable to Microsoft’s OneNote. With Evernote, you can also create as many notebooks as you want. Inside, you can collect your notes chronologically, like a folder. For every new note, you can assign keywords which you can use to re-find relevant notes. The keywords work the same way with inserted pictures, tables, PDFs, or Office documents.
Evernote offers many interesting features, such as offline mode or searchable PDF files. However, the majority of the additional functions are only available in the paid versions Evernote Premium and Evernote Business. The free of charge basic rate on the other hand, is massively restricted.With this rate, only the search function, the passcode lock, as well as the ability to share and comment on notes by friends and acquaintances are integrated. Also, you have access to 60MB per month for uploads, and you can only synchronize between two devices. In the fee-based, premium version you receive 10GB or 20GB per month, and you can synchronize your notes limitlessly between all devices.
A further shortcoming is its user-friendliness. Since the software can be connected to countless apps and web applications – for example, the daily weather report – the notebook can quickly become overloaded. However, those who work regularly with Evernote will become accustomed to how it operates.
Notion: The “All-in-one” workspace
The Notion developer team calls its in-house alternative to OneNote an 'all-in-one' workspace. A tool for the entire team, for writing, planning, and organizing - Notion has all the necessary prerequisites to keep up with Microsoft's note-taking software. To this end, the application relies on three basic features: In the team wiki, all important information can be archived and viewed in the usual wiki manner for current and future projects. Meanwhile, the concrete planning of projects and tasks can be done via Kanban boards, tables, or lists. Meanwhile, Notion manages notes and documents separately.
Even though Notion is primarily aimed at companies and larger teams, the OneNote alternative could also be interesting for individuals - especially since the basic edition is completely free of charge and allows an unlimited number of pages and notes. The synchronization of data across all devices (macOS, Windows, iOS and Android) can also be enjoyed by non-paying users.
Purchasing a paid Notion subscription is recommended if you need features for collaboration like a shared workspace, an access rights system, or administrator tools. Version management, security mechanisms like SAML SSO or the possibility to add an unlimited number of team members and guests are only available to paying Notion customers.
For the design of the workspace, the alternative to OneNote provides over 40 content blocks and more than 50 starter templates. Whether you want to access your notes and planning via desktop application, app, or via the Notion web application is up to you. One downside is that there are limitations with the size of the file upload - users of the Personal plan have to be content with a maximum of five megabytes.
Simplenote: The understated alternative to OneNote
If you prefer a notebook that is simple and effective at the same time, without having a lot of features, then you will be in good hands with Simplenote. The program is completely free and simplicity is its strongest characteristic. As the name implies, it is an easy to use notebook which allows you to create notes on any platform such as iOS, Android, Mac, Windows, Linux, or on the web.
In order to use Simplenote, you have to register for free with the provider. All of your notes will automatically be saved to your account without a fixed data limit. In any case, it is recommended that your notes do not exceed 1,000 words in length, to avoid affecting the memory process.
Similarly to Evernote, your notes are organized chronologically by creation date and you can also organize them alphabetically. You can prioritize your notes with tags, so that they can be found quickly on the search list. This means you always have your important notes in view.
You can use your account to share notes with other Simplenote users. The share function can also be used through email or social media networks such as Facebook. A password lock can protect your notebook from unauthorized access.
In terms of the range of functions, Simplenote offers very little in comparison to its competitors. This suits people who prefer a notebook with a simple text format – especially because the program supports the popular Markdown language, which allows for simple design options. However, multimedia features or the ability to insert or edit documents is not available.
Another downside is that you have to log into your Simplenote account every time you use the program if you want to create or share notes.
Google Keep: Wherever, whenever – record your ideas anywhere
Those who want to record their ideas in a quick and simple way will find Google Keep just right. The free program is particularly suited to Smartphone users who want to jot down and save their thoughts on the go. As a result of this, Google Keep is a suitable and easy to use alternative to OneNote.
Google Keeps works a bit like a bulletin board: your notes are laid out on the display screen like post-its which can also be marked in color. One particularly special feature is that with the Android app, you can even dictate your notes instead of typing them.
Google Keep is available as an app for Android and iOS, as well as a web application. There is also an additional Chrome extension. Synchronizing between devices works through the in-house cloud Google Drive. With Google Drive you have access to 15GB storage space, free of charge. However, you will need a Google account in order to use Google Keep.
Google Keep doesn’t just let you make notes and checklists, it also allows you to save photos and documents which you can then share with other users. Use the integrated search bar to find all your notes and content. A plus: the memory function, so you will never forget another appointment.
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Memonic: Keep the overview together?
Memonic is also a very popular digital notebook amongst users. There is a free of charge and a paid version of the program. In the free version you can create up to 100 notes, as well as 3 group projects per month. On top of that, you are permitted 2MB per file attachment. If you opt for the Premium version, you can make unrestricted use of all the features. The file attachment size allowance increases to 20MB per file. Premium users can also use the “collection mode”, which is helpful when undertaking extensive web research.
Students receive a discount on the Premium version.
One of the unique aspects of Memonic is that, similar to social networks, you can choose to make your entries private and visible only to yourself, your friends, or public to all users. You can also make groups and create shared notes. Discuss your projects together directly using the integrated mail function or share your notes over social networks such as Facebook or Twitter. You can save content from the web directly into Memonic using the additional tool Web Clipper.
Memonic also scores big points in terms of multimedia. Not only do you get a multifunctional text tool, but you can also embed documents, graphics, videos etc. at the same time. Tags help you prioritize your notes and locate things quickly on the search list. Last but not least, there is a wide variety of background themes available to choose from.
Onenote Outline Template
Memonic functions seamlessly on all devices. The app is available for iPhone, iPad, Mac, Android and Windows, as well as a web application and browser extension.
Memonic has the potential to shine as a OneNote alternative, however, you only get unrestricted access to all the tools and features with the paid version. Since Memonic works as a social network, you should be careful of what notes you want to share with the public: be sure to check the privacy settings. Those who are cautious with security should opt for the private setting and then manually share individual notes.
Onenote Outline Box
Outline 3 21 3 – View Onenote Notebooks Free
Those who want to upload their notes to Wiki sites should take a look at the Zim software. Another interesting OneNote alternative is TiddlyWiki, a non-linear web notebook for sophisticated users.
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December 2021
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